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Preliminary Data Sheet No. PD60063I
IR2154
SELF-OSCILLATING HALF-BRIDGE DRIVER
Features
* * * * * * * * * * * * *
Integrated 600V half-bridge gate driver 15.6V zener clamp on Vcc True micropower start up Tighter initial deadtime control Low temperature coefficient deadtime Shutdown feature (1/6th Vcc) on CT pin Increased undervoltage lockout Hysteresis (1V) Lower power level-shifting circuit Constant LO, HO pulse widths at startup Lower di/dt gate driver for better noise immunity High side output in phase with RT Excellent latch immunity on all inputs and outputs ESD protection on all leads
Product Summary
VOFFSET Duty Cycle Tr/Tp Vclamp Deadtime (typ.) 600V max. 50% 80/40ns 15.6V 1.2 s
Packages
Description
The IR2154 is an improved version of the popular IR2152 gate driver IC, and incorporates a high voltage half-bridge gate driver with a front end oscillator similar to the industry standard CMOS 555 timer. The IR2154 provides more functionality and is easier to use than previous ICs. A shutdown feature has been designed into the CT pin, so that both gate driver outputs can be disabled using a low voltage control signal. In addition, the gate driver output pulse widths are the same once the rising undervoltage lockout threshold on VCC has been reached, resulting in a more stable profile of frequency vs time at startup. Noise immunity has been improved significantly, both by lowering the peak di/dt of the gate drivers, and by increasing the undervoltage lockout hysteresis to 1V. Finally, special attention has been payed to maximizing the latch immunity of the device, and providing comprehensive ESD protection on all pins.
8 Lead PDIP
8 Lead SOIC
Typical Connection
600V MAX
VCC
VB
HO RT VS
CT Shutdown COM
LO
IR2154
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to COM, all currents are defined positive into any lead. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Symbol
VB VS VHO VLO VRT VCT ICC IRT dVs/dt PD RthJA TJ TS TL
Definition
High side floating supply voltage High side floating supply offset voltage High side floating output voltage Low side output voltage RT pin voltage CT pin voltage Supply current (note 1) RT pin current Allowable offset voltage slew rate Maximum power dissipation @ TA +25C Thermal resistance, junction to ambient Junction temperature Storage temperature Lead temperature (soldering, 10 seconds) (8 Lead DIP) (8 Lead SOIC) (8 Lead DIP) (8 Lead SOIC)
Min.
-0.3 VB - 25 VS - 0.3 -0.3 -0.3 -0.3 -- -5 -50 -- -- -- -- -55 -55 --
Max.
625 VB + 0.3 VB + 0.3 VCC + 0.3 VCC + 0.3 VCC + 0.3 25 5 50 1.0 0.625 125 200 150 150 300
Units
V
mA V/ns W
C/W
C
Recommended Operating Conditions
For proper operation the device should be used within the recommended conditions.
Symbol
VBs VS VCC ICC TJ Note 1:
Definition
High side floating supply voltage Steady state high side floating supply offset voltage Supply voltage Supply current Junction temperature
Min.
VCC - 0.7 -3.0 (note 2) 10 (note 3) -40
Max.
VCLAMP 600 VCLAMP 5 125
Units
V
mA C
Note 2: Note 3:
This IC contains a zener clamp structure between the chip VCC and COM which has a nominal breakdown voltage of 15.6V. Please note that this supply pin should not be driven by a DC, low impedance power source greater than the VCLAMP specified in the Electrical Characteristics section. Care should be taken to avoid output switching conditions where the VS node flies inductively below ground by more than 5V. Enough current should br supplied to the VCC pin of the IC to keep the internal 15.6V zener diode clamping the voltage at this pin.
2
IR2154
Recommended Component Values
Symbol
RT CT
Component
Timing resistor value CT pin capacitor value
Min.
10 330
Max.
-- --
Units
k pF
IR2154 RT vs Frequency IR2153 RT vs Frequency
1000000
100000
Frequency (Hz)
10000
330pf 470pF 1nF
CT Values
1000
2.2nF 4.7nF 10nF
100
10 10 100 1000 RT (ohms) 10000 100000 1000000
Electrical Characteristics
VBIAS (VCC, V BS) = 12V, CL = 1000 pF, CT = 1 nF and TA = 25C unless otherwise specified. The VIN, VTH and IIN parameters are referenced to COM. The VO and I O parameters are referenced to COM and are applicable to the respective output leads: HO or LO.
Low Voltage Supply Characteristics
Symbol Definition
VCCUV+ VCCUVVCCUVH IQCCUV IQCC VCLAMP Rising VCC undervoltage lockout threshold Falling VCC undervoltage lockout threshold VCC undervoltage lockout Hysteresis Micropower startup VCC supply current Quiescent VCC supply current VCC zener clamp voltage
Min.
8.1 7.2 0.5 -- -- 14.4
Typ.
9.0 8.0 1.0 75 500 15.6
Max.
9.9 8.8 1.5 150 950 16.8
Units Test Conditions
V A V VCC VCCUVICC = 5mA
3
IR2154
Electrical Characteristics (cont.)
Floating Supply Characteristics
Symbol Definition
IQBSUV IQBS VBSMIN ILK Micropower startup VBS supply current Quiescent VBS supply current Minimum required VBS voltage for proper functionality from RT to HO Offset supply leakage current
Min.
-- -- -- --
Typ.
0 30 4.0 --
Max.
10 50 5.0 50
Units Test Conditions
A V A VCC VCCUVVCC=VCCUV+ + 0.1V VB = VS = 600V
Oscillator I/O Characteristics
Symbol Definition
fosc d ICT ICTUV VCT+ VCTVCTSD VRT+ VRTVRTUV VRTSD Oscillator frequency RT pin duty cycle CT pin current UV-mode CT pin pulldown current Upper CT ramp voltage threshold Lower CT ramp voltage threshold CT voltage shutdown threshold High-level RT output voltage, V CC - VRT Low-level RT output voltage UV-mode RT output voltage SD-Mode RT output voltage, VCC - VRT
Min.
19.4 94 48 -- 0.30 -- -- 1.8 -- -- -- -- -- -- --
Typ.
20 100 50 0.001 0.70 8.0 4.0 2.1 10 100 10 100 0 10 10
Max. Units Test Conditions
20.6 106 52 1.0 1.2 -- -- 2.4 50 300 50 300 100 50 300 kHz % uA mA V IRT = 100A IRT = 1mA IRT = 100A IRT = 1mA VCC VCCUVIRT = 100A, VCT = 0V IRT = 1mA, VCT = 0V RT = 36.9k RT = 7.43k fo < 100kHz VCC = 7V
mV
Gate Driver Output Characteristics
Symbol Definition
VOH High level output voltage, VBIAS -VO VOL Low-level output voltage, VO VOL_UV UV-mode output voltage, VO tr tf tsd td Output rise time Output fall time Shutdown propogation delay Output deadtime (HO or LO)
Min.
-- -- -- -- -- -- 0.35
Typ.
0 0 0 80 45 660 0.60
Max.
100 100 100 150 100 -- 0.85
Units Test Conditions
mV IO = OA IO = OA IO = OA VCC VCCUV-
nsec sec
4
IR2154
Functional Block Diagram
RT VB R + R R + R/2 + R/2 LOGIC DEAD TIME DELAY 15.6V LO S Q Q VCC DEAD TIME PULSE GEN
HV LEVEL HV SHIFT LEVEL SHIFT
Q PULSE FILTER R S VS HO
CT
UV DETECT
COM
Lead Definitions
Symbol
VCC RT CT COM LO VS HO VB
Description
Logic and internal gate drive supply voltage Oscillator timing resistor input Oscillator timing capacitor input IC power and signal ground Low side gate driver output High voltage floating supply return High side gate driver output High side gate driver floating supply
Lead Assignments
8 Lead PDIP
8 Lead SOIC
IR2154 5
IR2154S
IR2154
8 Lead PDIP
01-3003 01
8 Lead SOIC
6
01-0021 08
IR2154
V CLAMP Vccuv+ Vcc RT R T ,C T 2/3 1/3 CT
td HO
td LO
Figure 1. Input/Output Timing Diagram
Figure 2. Switching Time Waveform Definitions
Figure 3. Deadtime Waveform Definitions
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: (310) 322 3331 IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T 3Z2 Tel: (905) 453-2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo, Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: 65 838 4630 IR TAIWAN: 16 Fl. Suite D..207, Sec.2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936 http://www.irf.com/ Data and specifications subject to change without notice. 3/1/99
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